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Quantum Computing in Silicon with Donor Electron Spins

March 7, 2016 - 11:00am
Michelle Simmons
The University of New South Wales

Extremely long electron and nuclear spin coherence times have recently been demonstrated in isotopically pure Si-28 [1,2] making silicon one of the most promising semiconductor materials for spin based quantum information. The two level spin state of single electrons bound to shallow phosphorus donors in silicon in particular provide well defined, reproducible qubits [3] and represent a promising system for a scalable quantum computer in silicon. An important challenge in these systems is the realisation of an architecture, where we can position donors within a crystalline environment with approx. 20-50nm separation, individually address each donor, manipulate the electron spins using ESR techniques and read-out their spin states.


We have developed a unique fabrication strategy for a scalable quantum computer in silicon using scanning tunneling microscope hydrogen lithography to precisely position individual P donors in a Si crystal [4] aligned with nanoscale precision to local control gates [5] necessary to initialize, manipulate, and read-out the spin states [6]. During this talk I will focus on demonstrating spin transport [7] and single-shot spin read-out of precisely-positioned P donors in Si. I will also describe our approaches to scale up using rf reflectometry [8] and the investigation of 3D architectures for implementation of the surface code [9].


[1] K. Saeedi et al., Science 342, 130 (2013).

[2] J. T. Muhonen et al., Nature Nanotechnology 9, 986 (2014).

[3] B.E. Kane, Nature 393, 133 (1998).

[4] M. Fuechsle et al., Nature Nanotechnology 7, 242 (2012).

[5] B. Weber et al., Science 335, 6064 (2012).

[6] H. Buch et al., Nature Communications 4, 2017 (2013).

[7] B. Weber et al., Nature Nanotechnology 9, 430 (2014).

[8] M.G. House et al., Nature Communications 6, 8848 (2015)

[9] C. Hill et al., Science Advances 1, e1500707 (2015).

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